silicon surge voltage suppressor 5ssb ..x series weight: 0.115 kg dimensions in mm doc. no. 5sya 1031-01 nov.95 features the 5ssb silicon surge voltage suppressor consists of a diffused pnp-si-wafer mounted with pressure contact in a hermetically sealed metal-ceramic-package. 5ssb silicon surge voltage suppressors are best suited to protect power thyristors against small and medium power surges (e.g. 200 kw over 10 m s). they allow the use of thyristors with lower voltage capability and much smaller snubber circuits. applications are e.g.: traction, hvdc transmission, generator excitation, transmitter power supply, high power motor controls. abb semiconductors ag type and ordering number v r [ v ] 5ssb 50x0400 5ssb 50x0500 5ssb 38x0600 5ssb 38x0700 5ssb 30x0800 5ssb 30x0900 5ssb 26x1000 5ssb 26x1100 5ssb 23x1200 5ssb 23x1300 5ssb 20x1400 5ssb 20x1500 5ssb 30x1600 5ssb 30x1700 5ssb 30x1800 5ssb 30x1900 5ssb 26x2000 5ssb 26x2100 5ssb 26x2200 5ssb 26x2300 5ssb 23x2400 5ssb 23x2500 5ssb 23x2600 5ssb 23x2700 5ssb 20x2800 5ssb 20x2900 5ssb 20x3000 5ssb 20x3100 450 50 550 50 650 50 750 50 850 50 950 50 1050 50 1150 50 1250 50 1350 50 1450 50 1550 50 1650 50 1750 50 1850 50 1950 50 2050 50 2150 50 2250 50 2350 50 2450 50 2550 50 2650 50 2750 50 2850 50 2950 50 3050 50 3150 50
type and ordering number v r thyristor v drm v rrm i rm [a] i rrm 10 x 100 s p rav p rsm 1 x 10 s [v] [v] 1 x 10s 1 x 100s 1 x 1ms 1 x 10ms [a] [w] [kw] 5ssb 50x0400 5ssb 50x0500 450 50 550 50 500 600 500 135 33 7.5 70 30 * 350 5ssb 38x0600 5ssb 38x0700 650 50 750 50 700 800 380 100 25 4.5 60 30 * 350 5ssb 30x0800 5ssb 30x0900 850 50 950 50 900 1000 300 80 21 4 50 30 * 350 5ssb 26x1000 5ssb 26x1100 1050 50 1150 50 1100 1200 260 67 18 3.6 41 30 * 350 5ssb 23x1200 5ssb 23x1300 1250 50 1350 50 1300 1400 230 58 15 3.4 35 30 * 350 5ssb 20x1400 5ssb 20x1500 1450 50 1550 50 1500 1600 200 50 13 3 30 30 * 350 5ssb 30x1600 5ssb 30x1700 5ssb 30x1800 5ssb 30x1900 1650 50 1750 50 1850 50 1950 50 1800 1800 2000 2000 300 80 21 4 50 60 ** 700 5ssb 26x2000 5ssb 26x2100 5ssb 26x2200 5ssb 26x2300 2050 50 2150 50 2250 50 2350 50 2200 2200 2400 2400 260 67 18 3.6 41 60 ** 700 5ssb 23x2400 5ssb 23x2500 5ssb 23x2600 5ssb 23x2700 2450 50 2550 50 2650 50 2750 50 2600 2600 2800 2800 230 58 15 3.4 35 60 ** 700 5ssb 20x2800 5ssb 20x2900 5ssb 20x3000 5ssb 20x3100 2850 50 2950 50 3050 50 3150 50 3000 3000 3200 3200 200 50 13 3 30 60 ** 700 2 of 6 doc. no. 5sya 1031-01 nov.95 thermal resistance junction-heatsink: 5ssb 50x0400 ... 20x1500: r th = 0.5 k/w. 5ssb 30x1600 ... 20x3100 (double sided cooling): r th = 0.25 k/w. for single sided cooling (5ssb 50x0400 ... 20x1500) the side carrying the serial number shall be cooled. temperature coefficient of the avalanche voltage v r :+ 0.11 % per degree c: v r (t) = v ro [1 + 1.1 * 10 -3 (t - 60 oc)]. v r (60 oc) = v ro ; v r (25 oc) = 0.93* v ro ; v r (125 oc) = 1.07 * v ro . the blocking current i r is proportional to e [t(oc)/20oc] . i r (0.8 * v r ; t vj = 45 oc): 50 % - value: < 4 a; arithm. meanvalue: < 8 a. junction capacitance at zero voltage (t vj = 60 oc); 5ssb 50x0400 ... 20x1500: 1100 pf; 5ssb 30x1600 ... 20x3100: 550 pf. storage temperature/max. junction temperature -40...125 oc/125 oc . admissible acceleration (vibration): 10 g. mounting torque: 3.5 nm. v r symmetrical avalanche voltage at sin ? a = 20 a, t p = 10 s, t vj = 60 oc. i rm max. avalanche current for a single sine half wave pulse. i rrm max. avalanche current for 10 pulses of 100 s width, repetition frequency 50 hz. p rav admissible continuous losses at r thca 1 k/w, t a 60 oc. * single side cooling ** double side cooling p rsm peak power losses for a single 10 s current surge. t vj the initial virtual junction temperature is 60 oc. abb semiconductors ag 5ssb ..x series
doc. no. 5sya 1031-01 nov.95 3 of 6 5ssb ..x series abb semiconductors ag product of max. admissible square wave current i rrm and avalanche voltage v r in function of pulse width t p ; parameter is the repetition frequency. case temperature t c 60 oc. 5ssb 30x1600 - 5ssb 20x3100 5ssb 50x0400 - 5ssb 20x1500 5ssb 20x1400 5ssb 20x1500 5ssb 20x2800 5ssb 20x2900 5ssb 20x3000 5ssb 20x3100 f 5ssb 23x1200 5ssb 23x1300 5ssb 23x2400 5ssb 23x2500 5ssb 23x2600 5ssb 23x2700 5ssb 26x1000 5ssb 26x1100 5ssb 26x2000 5ssb 26x2100 5ssb 26x2200 5ssb 26x2300 e d 5ssb 30x0800 5ssb 30x0900 5ssb 30x1600 5ssb 30x1700 5ssb 30x1800 5ssb 30x1900 c 5ssb 50x0400 5ssb 50x0500 5ssa 38x0600 5ssb 38x0700 b a max. admissible current peak i r vs. base width t p . avalanche voltage v r vs. junction temperature t vj .
abb semiconductors ag 5ssb ..x series 4 of 6 doc. no. 5sya 1031-01 nov.95 avalanche current i r in function of the avalanche voltage v r for single sine wave pulses of base width t p 20s. t vj = 60 oc. 17 5ssb 26x2000 18 5ssb 26x2100 19 5ssb 26x2200 20 5ssb 26x2300 10 5ssb 23x1300 11 5ssb 20x1400 12 5ssb 20x1500 7 5ssb 26x1000 8 5ssb 26x1100 9 5ssb 23x1200 1 5ssb 50x0400 2 5ssb 50x0500 3 5ssb 38x0600 4 5ssb 38x0700 5 5ssb 30x0800 6 5ssb 30x0900 13 5ssb 30x1600 14 5ssb 30x1700 15 5ssb 30x1800 16 5ssb 30x1900 21 5ssb 23x2400 22 5ssb 23x2500 23 5ssb 23x2600 24 5ssb 23x2700 25 5ssb 20x2800 26 5ssb 20x2900 27 5ssb 20x3000 28 5ssb 20x3100
5ssb ..x series abb semiconductors ag doc. no. 5sya 1031-01 nov.95 5 of 6 avalanche voltage v r vs. base width t p for a single sine half wave current with peak i r as parameter. t vj = 60 oc.
abb semiconductors ag fabrikstrasse 3 ch-5600 lenzburg, switzerland telephone +41 62 888 6300 fax +41 62 888 6305 sales fax +41 62 888 6306 doc. no. 5sya 1031-01 nov.95 avalanche voltage v r vs. base width t p for a single sine half wave current with peak i r as parameter. t vj = 60 oc. advantages of the 5ssb ..r surge voltage suppressors: sharp avalanche-knee: small safety factor ( 1.2) for the protected thyristor required, very small leakage currents at 0.8 x v r ; that means higher operating voltages or cost reduction by using thyristors with lower blocking voltage. immediate ?turn-on?, no dangerous overshoot as seen e.g. with varistors, thereby clear and safe protection against overvoltages. rc-snubber can be smaller (smaller losses, cheaper), approx. 50-100 nf/100 w , to damp rfi oscillations. by using 5ssb, a matching of power thyristors can in most cases be avoided. 5ssb can be heat sunk and is therefore ideal to protect against repetitive surges. there is no aging, e.g. as compared to varistors (limited number of surges, deterioration of electrical data). the temperature coefficient is the same for both 5ssb and protected thyristor. in case of a thermal overload, the 5ssb produces always a short circuit, thus still protecting the thyristor.
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